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1

Complementary Black Phosphorus Tunneling Field-Effect Transistors

Wu, Peng, Ameen, Tarek, Zhang, Huairuo, Bendersky, Leonid A., Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib, Davydov, Albert V., Appenzeller, Joerg

Journal:

Year:

2018

Language:

english

File:

PDF, 1.05 MB

english, 2018

2

[IEEE 2015 International Workshop on Computational Electronics (IWCE) - West Lafayette, IN, USA (2015.9.2-2015.9.4)] 2015 International Workshop on Computational Electronics (IWCE) - Quantum dot lab: an online platform for quantum dot simulations

Sarangapani, Prasad, Mejia, Daniel, Charles, James, Gilbertson, Woody, Ilatikhameneh, Hesameddin, Ameen, Tarek, Roche, Andrew, Fonseca, James, Klimeck, Gerhard

Year:

2015

Language:

english

File:

PDF, 1.43 MB

english, 2015

3

Efficient and realistic device modeling from atomic detail to the nanoscale

Fonseca, J. E., Kubis, T., Povolotskyi, M., Novakovic, B., Ajoy, A., Hegde, G., Ilatikhameneh, H., Jiang, Z., Sengupta, P., Tan, Y., Klimeck, G.

Journal:

Journal of Computational Electronics

Year:

2013

Language:

english

File:

PDF, 952 KB

english, 2013

4

Brillouin zone unfolding method for effective phonon spectra

Boykin, Timothy B., Ajoy, Arvind, Ilatikhameneh, Hesameddin, Povolotskyi, Michael, Klimeck, Gerhard

Journal:

Physical Review B

Year:

2014

Language:

english

File:

PDF, 582 KB

english, 2014

5

Design Guidelines for Sub-12 nm Nanowire MOSFETs

Salmani-Jelodar, Mehdi, Mehrotra, Saumitra R., Ilatikhameneh, Hesameddin, Klimeck, Gerhard

Journal:

IEEE Transactions on Nanotechnology

Year:

2015

Language:

english

File:

PDF, 9.83 MB

english, 2015

6

Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

Ilatikhameneh, Hesameddin, Tan, Yaohua, Novakovic, Bozidar, Klimeck, Gerhard, Rahman, Rajib, Appenzeller, Joerg

Journal:

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Year:

2015

Language:

english

File:

PDF, 4.08 MB

english, 2015

7

Scaling Theory of Electrically Doped 2D Transistors

Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Appenzeller, Joerg, Rahman, Rajib

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 928 KB

english, 2015

8

Dielectric Engineered Tunnel Field-Effect Transistor

Ilatikhameneh, Hesameddin, Ameen, Tarek, Klimeck, Gerhard, Appenzeller, Joerg, Rahman, Rajib

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 7.25 MB

english, 2015

9

[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Achieving a higher performance in bilayer graphene FET - strain engineering

Chen, Fan W., Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib, Tao Chu,, Zhihong Chen,

Year:

2015

Language:

english

File:

PDF, 2.58 MB

english, 2015

10

Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

Wenjun Li,, Sharmin, Saima, Ilatikhameneh, Hesameddin, Rahman, Rajib, Yeqing Lu,, Jingshan Wang,, Xiaodong Yan,, Seabaugh, Alan, Klimeck, Gerhard, Jena, Debdeep, Fay, Patrick

Journal:

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Year:

2015

Language:

english

File:

PDF, 8.52 MB

english, 2015

11

[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Electrically doped WTe2 tunnel transistors

Ilatikhameneh, Hesameddin, Rahman, Rajib, Appenzeller, Joerg, Klimeck, Gerhard

Year:

2015

Language:

english

File:

PDF, 1.95 MB

english, 2015

12

[IEEE 2015 International Workshop on Computational Electronics (IWCE) - West Lafayette, IN, USA (2015.9.2-2015.9.4)] 2015 International Workshop on Computational Electronics (IWCE) - Electrically doped 2D material tunnel transistor

Ilatikhameneh, Hesameddin, Chen, Fan W., Rahman, Rajib, Klimeck, Gerhard

Year:

2015

Language:

english

File:

PDF, 301 KB

english, 2015

13

[IEEE 2015 International Workshop on Computational Electronics (IWCE) - West Lafayette, IN, USA (2015.9.2-2015.9.4)] 2015 International Workshop on Computational Electronics (IWCE) - Engineering the optical transitions of self-assembled quantum dots

Ameen, Tarek A., Ilatikhameneh, Hesameddin, Valencia, Daniel, Rahman, Rajib, Klimeck, Gerhard

Year:

2015

Language:

english

File:

PDF, 353 KB

english, 2015

14

Electrically Tunable Bandgaps in Bilayer MoS 2

Chu, Tao, Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib, Chen, Zhihong

Journal:

Year:

2015

Language:

english

File:

PDF, 4.44 MB

english, 2015

15

[IEEE 2015 International Workshop on Computational Electronics (IWCE) - West Lafayette, IN, USA (2015.9.2-2015.9.4)] 2015 International Workshop on Computational Electronics (IWCE) - Mode space tight binding model for ultra-fast simulations of III-V nanowire MOSFETs and heterojunction TFETs

Afzalian, A., Huang, J., Ilatikhameneh, H., Charles, J., Lemus, D., Lopez, J. Bermeo, Rubiano, S. Perez, Kubis, T., Povolotskyi, M., Klimeck, G., Passlack, M., Yeo, Y.-C.

Year:

2015

Language:

english

File:

PDF, 814 KB

english, 2015

16

Can Homojunction Tunnel FETs Scale Below 10 nm?

Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.89 MB

english, 2016

17

[IEEE 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) - Rome, Italy (2015.7.27-2015.7.30)] 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) - Tunneling: The major issue in ultra-scaled MOSFETs

Salmani Jelodar, Mehdi, Ilatikhameneh, Hesameddin, Sarangapani, Prasad, Mehrotra, Saumitra R., Klimeck, Gerhard, Kim, SungGuen, Ng, Kwok

Year:

2015

Language:

english

File:

PDF, 1.13 MB

english, 2015

18

Unfolding and effective bandstructure calculations as discrete real- and reciprocal-space operations

Boykin, Timothy B., Ajoy, Arvind, Ilatikhameneh, Hesameddin, Povolotskyi, Michael, Klimeck, Gerhard

Journal:

Physica B: Condensed Matter

Year:

2016

Language:

english

File:

PDF, 1.09 MB

english, 2016

19

[IEEE 2014 Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2014.6.8-2014.6.9)] 2014 Silicon Nanoelectronics Workshop (SNW) - Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors

Ilatikhameneh, Hesameddin, Novakovic, Bozidar, Tan, Yaohua, Salmani-Jelodar, Mehdi, Kubis, Tillmann, Povolotskyi, Michael, Rahman, Rajib, Klimeck, Gerhard

Year:

2014

Language:

english

File:

PDF, 581 KB

english, 2014

20

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

Chen, Fan, Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Chen, Zhihong, Rahman, Rajib

Journal:

IEEE Journal of the Electron Devices Society

Year:

2016

Language:

english

File:

PDF, 1.89 MB

english, 2016

21

From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of Tunneling

Ilatikhameneh, Hesameddin, Salazar, Ramon B., Klimeck, Gerhard, Rahman, Rajib, Appenzeller, Joerg

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.63 MB

english, 2016

22

Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots

Ilatikhameneh, Hesameddin, Ameen, Tarek, Klimeck, Gerhard, Rahman, Rajib

Journal:

IEEE Journal of Quantum Electronics

Year:

2016

Language:

english

File:

PDF, 6.46 MB

english, 2016

23

Design Rules for High Performance Tunnel Transistors from 2D Materials

Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Appenzeller, Joerg, Rahman, Rajib

Journal:

IEEE Journal of the Electron Devices Society

Year:

2016

Language:

english

File:

PDF, 6.22 MB

english, 2016

24

[IEEE 2014 IEEE 14th International Conference on Nanotechnology (IEEE-NANO) - Toronto, ON, Canada (2014.8.18-2014.8.21)] 14th IEEE International Conference on Nanotechnology - Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots

Ameen, Tarek, Ilatikhameneh, Hesameddin, Charles, James, Yuling Hsueh,, Sicong Chen,, Fonseca, Jim, Povolotskyi, Michael, Rahman, Rajib, Klimeck, Gerhard

Year:

2014

Language:

english

File:

PDF, 648 KB

english, 2014

25

Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs

Salmani Jelodar, Mehdi, Ilatikhameneh, Hesameddin, Kim, SungGuen, Ng, Kwok, Sarangapani, Prasad, Klimeck, Gerhard

Journal:

IEEE Transactions on Nanotechnology

Year:

2016

Language:

english

File:

PDF, 13.19 MB

english, 2016

26

[IEEE 2016 3rd International Conference on Advances in Computational Tools for Engineering Applications (ACTEA) - Zouk Mosbeh, Lebanon (2016.7.13-2016.7.15)] 2016 3rd International Conference on Advances in Computational Tools for Engineering Applications (ACTEA) - Simulation and optimization of HEMTs

Ilatikhameneh, Hesameddin, Ashrafi, Reza, Khorasani, Sina

Year:

2016

Language:

english

File:

PDF, 645 KB

english, 2016

27

Saving Moore’s Law Down To 1 nm Channels With Anisotropic Effective Mass

Ilatikhameneh, Hesameddin, Ameen, Tarek, Novakovic, Bozidar, Tan, Yaohua, Klimeck, Gerhard, Rahman, Rajib

Journal:

Scientific Reports

Year:

2016

Language:

english

File:

PDF, 1.04 MB

english, 2016

28

Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene

Chen, Fan W., Ilatikhameneh, Hesameddin, Ameen, Tarek A., Klimeck, Gerhard, Rahman, Rajib

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 8.46 MB

english, 2016

29

[IEEE 2016 74th Annual Device Research Conference (DRC) - Newark, DE, USA (2016.6.19-2016.6.22)] 2016 74th Annual Device Research Conference (DRC) - Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors

Long, Pengyu, Povolotskyi, Michael, Huang, Jun Z., Ilatikhameneh, Hesameddin, Ameen, Tarek, Rahman, Rajib, Kubis, Tillmann, Klimeck, Gerhard, Rodwell, Mark J. W.

Year:

2016

Language:

english

File:

PDF, 453 KB

english, 2016

30

[IEEE 2016 Progress in Electromagnetic Research Symposium (PIERS) - Shanghai, China (2016.8.8-2016.8.11)] 2016 Progress in Electromagnetic Research Symposium (PIERS) - Multiscale transport simulation of nanoelectronic devices with NEMO5

Huang, Jun Z., Pengyu Long,, Ilatikhameneh, Hesameddin, Ameen, Tarek, Rahman, Rajib, Povolotskyi, Michael, Rodwell, Mark J. W., Klimeck, Gerhard

Year:

2016

Language:

english

File:

PDF, 45 KB

english, 2016

31

[IEEE 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) - Sendai, Japan (2016.8.22-2016.8.25)] 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) - Novel III-N heterostructure devices for low-power logic and more

Fay, P., Li, W., Cao, L., Pourang, K., Islam, S. M., Lund, C., Saima, S., Ilatikhameneh, H., Amin, T., Huang, J., Rahman, R., Jena, D., Keller, S., Klimeck, G.

Year:

2016

Language:

english

File:

PDF, 365 KB

english, 2016

32

A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

Salazar, Ramon B., Ilatikhameneh, Hesameddin, Rahman, Rajib, Klimeck, Gerhard, Appenzeller, Joerg

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 2.23 MB

english, 2015

33

Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS 2 Heterostructures

Zheng, Changxi, Zhang, Qianhui, Weber, Bent, Ilatikhameneh, Hesameddin, Chen, Fan, Sahasrabudhe, Harshad, Rahman, Rajib, Li, Shiqiang, Chen, Zhen, Hellerstedt, Jack, Zhang, Yupeng, Duan, Wen Hui, Bao,

Journal:

Year:

2017

Language:

english

File:

PDF, 1.47 MB

english, 2017

34

Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions

Ameen, Tarek A., Ilatikhameneh, Hesameddin, Huang, Jun Z., Povolotskyi, Michael, Rahman, Rajib, Klimeck, Gerhard

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 3.36 MB

english, 2017

35

A Multiscale Modeling of Triple-Heterojunction Tunneling FETs

Huang, Jun Z., Long, Pengyu, Povolotskyi, Michael, Ilatikhameneh, Hesameddin, Ameen, Tarek A., Rahman, Rajib, Rodwell, Mark J. W., Klimeck, Gerhard

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.82 MB

english, 2017

36

Understanding contact gating in Schottky barrier transistors from 2D channels

Prakash, Abhijith, Ilatikhameneh, Hesameddin, Wu, Peng, Appenzeller, Joerg

Journal:

Scientific Reports

Year:

2017

Language:

english

File:

PDF, 2.45 MB

english, 2017

37

Transport in vertically stacked hetero-structures from 2D materials

Chen, Fan, Ilatikhameneh, Hesameddin, Tan, Yaohua, Valencia, Daniel, Klimeck, Gerhard, Rahman, Rajib

Journal:

Journal of Physics Conference Series

Year:

2017

Language:

english

File:

PDF, 2.10 MB

english, 2017

38

Robust mode space approach for atomistic modeling of realistically large nanowire transistors

Huang, Jun Z., Ilatikhameneh, Hesameddin, Povolotskyi, Michael, Klimeck, Gerhard

Journal:

Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 3.06 MB

english, 2018

39

Dramatic Impact of Dimensionality on the Electrostatics of PN Junctions and its Sensing and Switching Applications

Ilatikhameneh, Hesameddin, Ameen, Tarek, Chen, Fan, Sahasrabudhe, Harshad, Klimeck, Gerhard, Rahman, Rajib

Journal:

IEEE Transactions on Nanotechnology

Year:

2018

Language:

english

File:

PDF, 7.97 MB

english, 2018

40

Universality of Short-Channel Effects on Ultrascaled MOSFET Performance

Pourghaderi, M. Ali, Pham, Anh-Tuan, Ilatikhameneh, Hesameddin, Kim, Jongchol, Park, Hong-Hyun, Jin, Seonghoon, Chung, Won-Young, Choi, Woosung, Maeda, Shigenobu, Lee, Keun-Ho

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 1.64 MB

english, 2018

41

Switching Mechanism and the Scalability of Vertical-TFETs

Chen, Fan, Ilatikhameneh, Hesameddin, Tan, Yaohua, Klimeck, Gerhard, Rahman, Rajib

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.70 MB

english, 2018

42

Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs

Chen, Chin-Yi, Ameen, Tarek A., Ilatikhameneh, Hesameddin, Rahman, Rajib, Klimeck, Gerhard, Appenzeller, Joerg

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 3.89 MB

english, 2018

43

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

Ameen, Tarek A, Ilatikhameneh, Hesameddin, Tankasala, Archana, Hsueh, Yuling, Charles, James, Fonseca, Jim, Povolotskyi, Michael, Kim, Jun Oh, Krishna, Sanjay, Allen, Monica S, Allen, Jeffery W, Rahma

Journal:

Beilstein Journal of Nanotechnology

Year:

2018

Language:

english

File:

PDF, 5.29 MB

english, 2018

44

Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs

Ameen, Tarek A., Ilatikhameneh, Hesameddin, Fay, Patrick, Seabaugh, Alan, Rahman, Rajib, Klimeck, Gerhard

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 3.17 MB

english, 2018

45

[IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Udine, Italy (2019.9.4-2019.9.6)] 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Effective work-function tuning of TiN/HfO 2 /SiO 2 gate-stack; a density functional tight binding study

Ilatikhameneh, Hesameddin, Park, Hong-Hyun, Jiang, Zhengping, Choi, Woosung, Pourghaderi, Mohammad Ali, Kim, Jongchol, Kwon, Uihui, Kim, Dae Sin

Year:

2019

Language:

english

File:

PDF, 4.04 MB

english, 2019

46

Ballisticity Saturation by Unscalable Reflections

Pourghaderi, M Ali, Ilatikhameneh, Hesameddin, Pham, Anh-Tuan, Park, Hong-Hyun, Lim, Jinyoung, Jiang, Zhengping, Wang, Jing, Jin, Seonghoon, Kim, Jongchol, Kwon, Uihui, Chung, Won-Young, Choi, Woosung

Journal:

IEEE Electron Device Letters

Year:

2020

File:

PDF, 723 KB

2020

47

Impact of Body Thickness and Scattering on III-V Triple Heterojunction TFET Modeled With Atomistic Mode-Space Approximation

Chen, Chin-Yi, Ilatikhameneh, Hesameddin, Huang, Jun Z., Klimeck, Gerhard, Povolotskyi, Michael

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 2.48 MB

2020